| We study the Kondo effect in a quantum dot with discrete energy levels coupled to a single magnetic impurity. The electronic occupation can be changed by tuning the gate voltage that is applied to the dot. Solving the Hamiltonian within a mean-field approximation, we compute various physical quantities, e.g. the magnetic susceptibility, the conductance and the local density of states in the Kondo regime. Finite size effects lead to deviations from the universal behavior which would be expected for a bulk system. They are investigated by varying the number of energy levels and the mean level spacing. |
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